 | ·Digital CMOS laser sensor has the characteristics of small volume, small photoelectricity and high precision; Accurate detection of the relative displacement of the object to be measured is often used to measure physical quantities such as length, distance, vibration, speed and orientation. ·Repetition accuracy ·Repetition accuracy of 200μm ·The detection distance is 120-280mm. ·Switch analog quantity ·Waterproof grade IP67 |
| ▊ | Product introduction |
Non-contact measurement |
Non-contact measurement, gold and plastic can be detected. |
Ultra high precision |
Ultra-high precision, can measure tiny objects. |
easy installation |
Ultra-small sensor probe, easy to install, does not occupy the station. |
Real-time data grasping |
Communicate directly with external equipment, learn and control data in real time, and improve work efficiency. |
Short circuit protection |
Short-circuit protection: When the load is short-circuited, it not only protects itself but also protects the load from being burned out. |
overpower protection |
Automatic protection when the load is unstable and the current becomes larger. |
Reverse polarity protection |
The positive and negative poles of the product power cord are reversed, which will not burn the product. |
| ▊ | usage scenario |
Laser displacement sensor is suitable for lithium battery, printing and packaging, coating machine, intelligent manufacturing and other industries. It is often used to measure physical quantities such as length, height, width, distance, vibration, speed, orientation, object presence, shape and flatness, and can also be used for flaw detection and monitoring of air pollutants.
| ▊ | Product parameter |
| model | LD1-H200N/NA(NPN)/LD1-H200P/PA(PNP) | Model type | Switching value/dual output type |
Measuring center distance | 200mm | measuring range | ±80mm |
| repeatability | 200μm | linearity | ±0.2%F.S. |
Temperature characteristics | 0.03%F.S./℃ | light source | The maximum output of class 2 red semiconductor laser is 1mW, and the wavelength of its luminous beam is 655nm. |
| Beam diameter | appointment φ300μm | Power supply voltage | 12V-24V DC±10% pulsation P-P10% |
Consumption current | Less than 40mA (when the power supply voltage is 24V DC) and less than 60mA (when the power supply voltage is 12V DC). | ||
Control output (NPN) | [NPN Output type] NPN Open collector transistor ·Maximum inflow current：50mA ·impressed voltage：30V DCBelow (control output between -0V) ·Residual voltage: less than 1.5V (with inflow current of 50mA) ·Leakage current: less than 0.1mA | Control output(PNP) | [PNPOutput type] PNPChannel collector transistor ·Maximum inflow current：50mA ·impressed voltage：30V DC Below (between control output +V) ·Residual voltage: less than 1.5V (with an outflow current of 50mA) ·Leakage current: less than 0.1mA |
| Output action | ON in light/on in non-light can be switched. | Short circuit protection | Equipped (automatic recovery type) |
| Reaction time | 1.5ms/5ms10ms Switchable | external input | NPN contactless input is effective: 0V~+1.2V DC input impedance: about 10kΩ. |
| Protective structure | IP67(IEC） | weight | About 35g (excluding cable), about 85g (including cable) |
| ▊ | outline dimensional drawing |
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